Qualcomm today announces its latest flagship processor Snapdragon 835 in partnership with Samsung. The new Snapdragon 835 is made on 10nm FinFET node whose mass production was started back in October. This next generation processor from the mobile chipset company comes with Quick Charge 4 feature that charges your mobile device 20 percent faster than the previous generation Snapdragon processors.
Commenting on the launch of the processor, Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. says, “We are excited to continue working together with Samsung in developing products that lead the mobile industry, Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
“We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology, This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology.” said Jong Shik Yoon, executive vice president and head of foundry business, Samsung.
The Snapdragon 835 will start shipping in the first half of 2017 as per Qualcomm. The Samsung’s 10nm technology used in this processor allows up to a 30% increase in area efficiency and gives 27% higher performance or up to 40% lower power consumption. With the help of using this 10nm FinFET, the SD835 processor will give a smaller chip footprint that will provide the OEMs more space to use larger batteries or slimmer designs with their phones. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.